【Applied Surface Science】Ultrathin Mo/MoN Bilayer Nanostructure For Diffusion Barrier Application Of Advanced Cu Metallization
作者：Zhao B, Sun KF, Song ZL, Yang JH.
關(guān)鍵字：Mo/MoN, Diffusion barrier
論文來(lái)源：期刊
具體來(lái)源：Applied Surface Science, 2010, 256: 6003.
發(fā)表時(shí)間：2010年
Ultrathin Mo (5 nm)/MoN (5 nm) bilayer nanostructure has been studied as a diffusion barrier for Cu metallization. The Mo/MoN bilayer was prepared by magnetron sputtering and the thermal stability of this barrier is investigated after annealing the Cu/barrier/Si film stack at different temperatures in vacuum for 10 min. The failure of barrier structure is indicated by the abrupt increase in sheet resistance and the formation of Cu3Si phase proved by X-ray diffraction (XRD) and energy-dispersive X-ray spectroscopy (EDS). High resolution transmission electron microscopy (HRTEM) examination suggested that the ultrathin Mo/MoN barrier is stable and can prevent the diffusion of Cu at least up to 600 °C.