作者：Wang H, Han T, Yang J, Tao Z, Guo Q, Liu Z, Feng Z, Liu L.
關鍵字：boron doping, carbon fibers
論文來源：期刊
具體來源：RSC Advances, 2014, 4(103): 59150-59156.
發表時間：2014年
In the present work, we provide a systematic analysis of the structural evolution of rayon-based carbon ?bers (RCFs) induced by doping boron using scanning electron microscope (SEM), transmission electronmicroscope (TEM), X-ray di ? raction (XRD) and Raman spectroscopy. For the ? rst time, boron-dopedRCFs with tunable amounts of boron were fabricated by exposing the RCFs to a vapor of boron by thedecomposition of boron carbide (B 4 C). SEM and XRD results indicate that at the higher temperatures thestrong erosion of boron vapor not only changed the original structure of RCFs, but also produced some? aws. Interestingly, when the temperature of doping boron is higher than 2200 C, the graphite basal planes of RCFs are perpendicular to the ? ber axis. Raman spectra also con ? rmed the presence of disorders and ? aws in graphitic layers because of the displacement and solid solution of boron in thecarbon lattice. Further, the chemical environment of boron species was ascertained by 11B nuclearmagnetic resonance, indicating that boron atoms exist in three chemical environments, including the substitutional boron (BC 3 ), boron clusters and B 4 C. Moreover, the TGA data indicated that doping boron greatly improved the oxidation inhibition of RCFs, and is superior to increasing the heat treatment temperature for improving the oxidation resistance. Such a systematic analysis of the structural evolution and oxidation resistance of RCFs induced by doping boron thus provides industrial potential for preparing RCFs with higher oxidation resistance at up to 800C.